sot-23 plastic-encapsulate diodes baw56/bav70/bav99 switching diode features z fast switching speed z for general purpose switching applications z high conductance baw56 marking: a1 bav70 marking: a4 bav99 marking: a7 maximum ratings @t a =25 parameter symbol limit unit reverse v oltage v r 70 v forward current i f 200 ma peak forward surge current i fm(surge) 500 ma power dissipation p d 225 mw thermal resistance junction to ambient r ja 556 /w junction t emperature t j 150 storage t emperature range t stg -55~+ 150 electrical characteristics @t a =25 parameter symbol min typ max unit conditions reverse b reakdown v oltage v r 70 v i r =100 a v f1 0.715 v i f =1ma v f2 0.855 v i f =10ma v f3 1 v i f =50ma forward v oltage v f4 1.25 v i f =150ma reverse c urrent i r 2.5 a v r =70v capacitance between terminals c t 1.5 pf v r =0,f=1mhz reverse recovery time t r r 6 ns i f = i r = 10ma, irr= 0.1 x i r , r l = 100 ? sot-23 tiger electronic co.,ltd a,may,2011
0 25 50 75 100 125 150 0 50 100 150 200 250 300 0.0 0.4 0.8 1.2 1.6 0.1 1 10 100 0 20406080 1 10 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 bav99 typical characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) 300 30 3 0.3 t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) 300 30 3 ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) forward characteristics reverse characteristics ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) a,may,2011
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